BETWEEN CARRIER DISTRIBUTIONS AND DOPANT ATOMIC DISTRIBUTION IN BEVELED SILICON SUBSTRATESHU SM.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1499-1510; BIBL. 13 REF.Article

FILM-EDGE-INDUCED STRESS IN SILICON SUBSTRATES.HU SM.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 5-7; BIBL. 7 REF.Article

ON INDENTATION DISLOCATION ROSETTES IN SILICON.HU SM.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1470-1472; BIBL. 10 REF.Article

DISLOCATIONS IN THERMALLY STRESSED SILICON WAFERSHU SM.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 5; PP. 261-264; BIBL. 13 REF.Serial Issue

CRITICAL STRESS IN SILICON BRITTLE FRACTURE, AND EFFECT OF ION IMPLANTATION AND OTHER SURFACE TREATMENTSHU SM.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3576-3580; BIBL. 12 REF.Article

A METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT.HU SM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 139-141; BIBL. 14 REF.Article

INFRARED ABSORPTION SPECTRA OF SIO₂ PRECIPITATES OF VARIOUS SHAPES IN SILICON: CALCULATED AND EXPERIMENTALHU SM.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5945-5948; BIBL. 27 REF.Article

SOME CONSIDERATIONS IN THE FORMULATION OF IC YIELD STATISTICSHU SM.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 205-211; BIBL. 14 REF.Article

DISLOCATION PINNING EFFECT OF OXYGEN ATOMS IN SILICON.HU SM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 53-55; BIBL. 14 REF.Article

EFFECTS OF SURFACE FILMS AND FILM EDGES ON DISLOCATION MOVEMENT IN SILICON.HU SM.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1465-1469; BIBL. 4 REF.Article

ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING FAULTS IN SILICON.HU SM.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 165-167; BIBL. 6 REF.Article

FILM-EDGE-INDUCED STRESS IN SUBSTRATESHU SM.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4661-4666; BIBL. 8 REF.Article

EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON.HU SM; PATRICK WJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 1869-1874; BIBL. 14 REF.Article

THE EFFECT OF SIO₂ PRECIPITATION IN SI ON GENERATION CURRENTS IN MOS CAPACITORSPATRICK WJ; HU SM; WESTDORP WA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1399-1402; BIBL. 9 REF.Article

ON THE DIAMOND-CUBIC TO HEXAGONAL PHASE TRANSFORMATION IN SILICONTAN TY; FOELL H; HU SM et al.1981; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1981; VOL. 44; NO 1; PP. 127-140; BIBL. 23 REF.Article